{"id":3915,"date":"2024-11-27T16:20:02","date_gmt":"2024-11-27T07:20:02","guid":{"rendered":"https:\/\/www.toyodagosei-led.jp\/?p=3915"},"modified":"2024-11-27T16:18:26","modified_gmt":"2024-11-27T07:18:26","slug":"gan%e3%83%91%e3%83%af%e3%83%bc%e5%8d%8a%e5%b0%8e%e4%bd%93%e3%81%ae%e6%8a%80%e8%a1%93%e3%82%92%e3%80%8csemicon-japan-2024%e3%80%8d%e3%81%a7%e7%b4%b9%e4%bb%8b%e3%81%97%e3%81%be%e3%81%99","status":"publish","type":"post","link":"https:\/\/www.toyodagosei-led.jp\/en\/information\/event\/3915\/","title":{"rendered":"Toyoda Gosei to introduce GaN power semiconductor technology at “SEMICON Japan 2024″"},"content":{"rendered":"

Toyoda Gosei Co., Ltd. (Kiyosu,Japan)will exhibit substrates for next-generation power semiconductors (GaN power semiconductors)
\nat the Ministry of the Environment's booth during the international semiconductor exhibition \"SEMICON Japan 2024,\"
\nheld at TOKYO BIG SIGHT (Koto-ku, Tokyo) from December 11th for three days.<\/p>\n

Power semiconductors are widely used in industrial equipment, automobiles, and household appliances for power control.
\nCurrently, achieving carbon neutrality across society requires the widespread adoption of next-generation power semiconductors,
\nwhich can reduce power loss during the control of renewable energy and electric vehicles. Our company is advancing
\nthe development of high-quality, large-diameter substrates necessary for the practical application of GaN power semiconductors
\nthrough collaboration among industry, government, and academia.<\/p>\n

At this exhibition, we will introduce our technologies for enhancing the quality and enlarging the diameter of substrates.
\nWe will also explain the process of producing multiple GaN substrates from seed crystals using actual samples (developing substrates) and models.<\/p>\n

<Exhibition Overview><\/p>\n

\u25c6Dates: December 11th(Wed) to December 13th(Fri) 2024, 10:00 AM \u2013 5:00 PM
\n\u25c6Venue: TOKYO BIG SIGHT, within the Ministry of the Environment's booth
\n\u25c6Exhibition URL: https:\/\/www.semiconjapan.org\/en<\/a><\/p>\n

<Exhibition Content><\/p>\n

\"\"<\/p>\n

<Reference: GaN power semiconductor development process><\/p>\n

\"\"<\/p>\n

------------------------------------------------------------------------------------------<\/p>\n

For inquiries , please\u00a0contact us.<\/a><\/p>\n

\uff0aJump to the inquiry form page.<\/p>","protected":false},"excerpt":{"rendered":"

Toyoda Gosei Co., Ltd. (Kiyosu,Japan)will exhibit subst…<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":[],"categories":[4],"tags":[],"_links":{"self":[{"href":"https:\/\/www.toyodagosei-led.jp\/en\/wp-json\/wp\/v2\/posts\/3915"}],"collection":[{"href":"https:\/\/www.toyodagosei-led.jp\/en\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/www.toyodagosei-led.jp\/en\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/www.toyodagosei-led.jp\/en\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/www.toyodagosei-led.jp\/en\/wp-json\/wp\/v2\/comments?post=3915"}],"version-history":[{"count":8,"href":"https:\/\/www.toyodagosei-led.jp\/en\/wp-json\/wp\/v2\/posts\/3915\/revisions"}],"predecessor-version":[{"id":3924,"href":"https:\/\/www.toyodagosei-led.jp\/en\/wp-json\/wp\/v2\/posts\/3915\/revisions\/3924"}],"wp:attachment":[{"href":"https:\/\/www.toyodagosei-led.jp\/en\/wp-json\/wp\/v2\/media?parent=3915"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/www.toyodagosei-led.jp\/en\/wp-json\/wp\/v2\/categories?post=3915"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/www.toyodagosei-led.jp\/en\/wp-json\/wp\/v2\/tags?post=3915"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}